A 36V JFET-Input Bipolar Operational Amplifier with 1µV/°C Maximum Offset Drift and –126dB Total Harmonic Distortion

📋 论文概要

提出了一款36V JFET输入双极性运算放大器，采用漂移补偿电路和晶圆级双温度激光微调技术，实现了最大失调漂移低至1µV/°C，比现有技术提高3倍，同时具有11MHz带宽、5.1nV/√Hz噪声和-126dB THD+N的优异性能。

💡 主要创新点

• 提出一种漂移补偿电路结合晶圆级双温度激光微调方法，将失调漂移降低到1µV/°C，突破传统高精度运放的温度稳定性极限。
• 在36V高压工艺下同时实现了高增益带宽(11MHz)、低噪声(5.1nV/√Hz)和极低失真(-126dB THD+N)，达到功耗与性能的良好平衡。

🏷 关键词

📄 原文摘要

A 36V JFET-input bipolar operational amplifier is presented with a maximum offset drift of 1µV/°C over a temperature range of –40 to 125°C, which represents a 3x improvement on the state-of-the-art. This is achieved with a drift-compensating circuit incorporated in the input stage that relies on a wafer-level 2-temperature laser-trimming method. The opamp has a GBW of 11MHz, a flat-band noise of 5.1nV/√Hz, a slew-rate of 20V/µs, a –126dB (0.00005%) total harmonic distortion plus noise (THD+N) ratio, and a quiescent current of 1.8mA. This combination of high slew rate and good noise-to-power ratio is accomplished through the use of a linearized class-AB boosting circuit in the input stage. High-voltage (>30V) operational amplifiers (opamps) are often used in signalconditioning circuits for industrial applications to ensure compatibility with legacy equipment. In such applications, good DC precision, i.e., low offset, offset

👥 作者与机构

Martijn F. Snoeij, Mikhail V. Ivanov

Texas Instruments, Erlangen, Germany