A ±0.4°C (3σ) -70 to 200°C Time-Domain Temperature Sensor Based on Heat Diffusion in Si and SiO2

📋 论文概要

该论文提出了一种基于硅和二氧化硅中热扩散原理的时间域温度传感器，能够在-70至200°C范围内实现±0.4°C（3σ）的高精度温度测量，解决了传统BJT温度传感器在高温下精度急剧下降的问题。

💡 主要创新点

• 利用热扩散在硅和二氧化硅中的传播延迟与温度的关系实现温度传感，避免了BJT中饱和电流的温度依赖性误差。
• 采用时间域测量方式，通过量化热脉冲的传播时间来实现温度转换，提高了高温下的稳定性和精度。

🏷 关键词

📄 原文摘要

National Semiconductor, Santa Clara, CA 1 2 Despite the increasing use of ICs at very high temperatures (>150°C) in automotive and industrial applications, sensing such temperatures is still mostly done with discrete thermocouples or thermistors. This is because conventional integrated temperature sensors are based on BJTs, which have a strongly process-, stress- and temperature-dependent saturation current (Is). Together with other leakage currents, this leads to rapidly increasing temperature errors at high temperatures: up to ±3.0°C at 200°C [1]. Alternatively, absolute temperature Tabs can be sensed by measuring the thermal diffusivity of silicon (DSi), i.e. the rate at which heat diffuses through silicon, −1.8 since DSi ∝ Tabs . Such sensors are insensitive to process spread [2] and packaging stress [3], while their inaccuracy is mainly limited by lithography and can be as low as ±0.2°C (3σ) without trimming [3]. Thermal diffusivity sensors can

👥 作者与机构

Caspar van Vroonhoven1, Dan D’Aquino2, Kofi Makinwa1

Delft University of Technology, Delft, The Netherlands