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ISSCC 2012Session 16 · SWITCHING POWER CONTROL TECHNIQUESPower Management65nm CMOS

Near-Independently Regulated 5-Output Single-Inductor DC-DC Buck Converter Delivering 1.2W/mm2 in 65nm CMOS

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📋 论文概要

本文提出了一种在65nm CMOS工艺下实现的5输出单电感降压DC-DC转换器,通过近独立调节技术解决了传统单电感多输出(SIMO)转换器中的交叉调节和低功率密度问题,实现了1.2W/mm2的高功率密度。

💡 主要创新点

核心指标
1.2W/mm2功率密度
工艺节点
65nm CMOS
重要性
发表年份
ISSCC 2012

🏷 关键词

单电感多输出降压转换器近独立调节功率密度65nm CMOS

📄 原文摘要

For minimizing the power consumption in portable devices, efficient DC-DC converters with a wide range of regulated voltages and currents are needed. Considering the required footprint area, cost, and chip count, integration of single-inductor-multiple-output (SIMO) DC-DC converters into the system, particularly in scaled CMOS processes, is highly desirable. However, the cross regulation and low power density of SIMO solutions are obstacles to system integration [1-5]. Another problem is the capability of handling high battery voltage in advanced CMOS processes. This paper presents control and circuit techniques used in a 65nm CMOS SIMO buck converter with near-independently regulated five outputs and high power density. The cross-regulation problem is mostly encountered among SIMO converters [1-5]. This problem results in accuracy and stability degradation of each output channel. To solve it, the energy distribution to each sub-channel should be well

👥 作者与机构

Chien-Wei Kuan, Hung-Chih Lin

MediaTek, Hsinchu, Taiwan

分类:Power Management · 年份:ISSCC 2012