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该论文提出了一种针对碳化硅（SiC）JFET功率开关的优化驱动电路，解决了传统驱动方案在高频开关下效率受限的问题。通过改进驱动器的拓扑和时序控制，实现了超过99%的转换效率，适用于功率因数校正器和太阳能板等高效能电力转换系统。
Nowadays, there is a high demand for highly efficient power converters that can be put in systems such as power factor correctors or solar panels. A silicon carbide (SiC) based power switch has a very good performance when it comes to switching and conduction losses. As on silicon, the manufacturing of junction devices is easier than MOSFET devices because the growth of highly reliable oxide is very challenging [1]. Recently, a family of high-voltage SiC junction FET (JFET) transistors has been developed which has made it possible to reach an efficiency of more than 99% with a buck converter. The low switching loss of these transistors allows for the use of a higher switching frequency and smaller external components which in turn reduce PCB area and overall system cost. A dedicated gate driver with possible bootstrap operation has been developed for a normally-on n-type JFET. It allows maximum efficiency, operation as safe as
Karl Norling, Christian Lindholm, Dieter Draxelmayr
Infineon Technologies, Villach, Austria