A 0.0025mm2 Bandgap Voltage Reference for 1.1V Supply in Standard 0.16µm CMOS Tmin= -100°C and results in VREF ≅ 900mV. In our design we did some extra optimization in the length ratios and width ratios of the transistors to get maximum curvature correction. The designed circuit occupies 50×50µm2 in a standard 0.16µm bulk CMOS technology. Measurements are done on a Süss Microtec PM200 wafer prober with cooling, using a Keithley 4200 analyzer.

📋 论文概要

该论文提出了一种适用于1.1V电源电压的0.0025mm²带隙电压基准电路，采用标准0.16µm CMOS工艺，解决了深亚微米技术中电源电压接近材料带隙时经典带隙结构无法使用的问题。

💡 主要创新点

• 提出了一种面积仅为0.0025mm²的紧凑型带隙电压基准电路，适用于低电压应用。
• 实现了在-100°C低温下仍能稳定输出约900mV的参考电压，扩展了工作温度范围。

🏷 关键词

📄 原文摘要

Anagear, Rosmalen, The Netherlands 1 2 Todays ICs usually employ one bandgap voltage reference (BGVR) circuit to generate a well defined voltage that is reused at many places in that IC. The classical BGVR generates a reference voltage that is slightly larger than the material bandgap: a little above 1200mV in silicon. For deep-sub-micron technologies the supply voltage is about the same as the material bandgap which prevents using the classical bandgap structure. As a solution a number of BGVR topologies that create a sub-1V are invented; most of them are based on the structure introduced by Banba [1], some are using resistive voltage division [2] or voltage averaging [3]. For low-power operation high-ohmic resistors (occupying a large area!) must be used in all these techniques, leading to an immediate trade-off between power consumption and chip-area. This trade-off prevents the local generation of reference voltages where they are required: either the power penalty or the area pena

👥 作者与机构

Anne-Johan Annema1, George Goksun2

University of Twente, Enschede, The Netherlands