← 返回论文列表 📄 下载原文 PDF  ISSCC 2013 · 19.1
ISSCC 2013Session 19 · WIRELESS TRANSCEIVERS FOR SMART DEVICESWireless45nm CMOS

A Fully Integrated 2×2 b/g and 1×2 a-Band MIMO WLAN SoC in 45nm CMOS for Multi-Radio IC

⚡ 本页包含 AI 生成的分析内容,仅供参考

📋 论文概要

该论文实现了一款完全集成的2×2 b/g和1×2 a频段MIMO WLAN SoC,采用45nm CMOS工艺,用于多无线电IC。它解决了多频段、多天线WLAN系统在单芯片上的集成挑战,实现了高数据速率和低功耗。

💡 主要创新点

工艺节点
45nm CMOS
重要性
发表年份
ISSCC 2013

🏷 关键词

MIMOWLANSoC45nm CMOS多无线电集成

📄 原文摘要

Debapriya Sahu1, Apu Sivadas1, Murali Nandigam1, Saravana Ganeshan1, Srihari Datla1, Anand Kudari1, Hemant Bhasin1, Meghna Agrawal1, Subramanian Narayan1, Yogesh Dharwekar1, Robin Garg1, Vimal Edayath1, Thirunaavukkarassu Suseela1, Vikram Jayaram1, Shankar Ram1, Vidhya Murugan1, Anil Kumar1, Subhashish Mukherjee1, Nagaraj Dixit1, Eran Nussbaum2, Joel Dror2, Nir Ginzburg2, Asaf EvenChen2, Asaf Maruani2, Swaminathan Sankaran3, Venkatesh Srinivasan3, Vijay Rentala3 Texas Instruments, Bangalore, India, 2Texas Instruments, Ra’anana, Israel, Texas Instruments, Dallas, TX 1 3 A significant increase in Smartphones and tablets with embedded Wi-Fi demands a low-cost system solution. In this paper the RF core of an 802.11n 2×2 b/g band, 2×1 a-band MIMO WLAN SoC with die area of 3.83mm2 in 45nm CMOS is described. As shown in Fig. 19.1.1 the SoC has integrated Power Amplifier (PA) for both bands and T/R switch in b/g band, eliminating the need

👥 作者与机构

Rakesh Kumar1, T. Krishnaswamy1, Gireesh Rajendran1,

分类:Wireless · 年份:ISSCC 2013