A Multiband 40nm CMOS LTE SAW-Less Modulator with -60dBc C-IM3

📋 论文概要

该论文提出了一种基于40nm CMOS工艺的多频段LTE无SAW调制器，针对LTE系统中因功率集中在少数资源块而产生的C-IM3干扰问题，实现了-60dBc的C-IM3性能。

💡 主要创新点

• 提出了一种多频段无SAW调制器架构，避免了传统SAW滤波器的使用，降低了成本和面积。
• 通过电路设计优化，在40nm CMOS工艺下实现了-60dBc的C-IM3，有效抑制了LTE FDD模式下的交叉调制干扰。

🏷 关键词

📄 原文摘要

scarceness of free spectrum, the complexity and versatility of 4th-generation modulation schemes is greater than ever. In particular, the LTE standard defines multiple RF bands and groups OFDM modulated subcarriers into Resource Blocks (RB) that can be flexibly used within the allocated channel bandwidth. When the transmitted power is concentrated in one or a few RBs, counter-intermodulation products (C-IM) may fall directly or through cross-modulation into the RX band and degrade FDD performance. They may also fall into protected bands and violate spectral emission requirements. The main contributor to C-IM3 comes from the baseband 3rd-order nonlinearity. In the mixer, the baseband’s HD3 is upconverted to LO-3BB (Fig. 19.6.1.A). In a

👥 作者与机构

Mark Ingels1, Yoshikazu Furuta2, Xiaoqiang Zhang1, Sungwoo Cha3, Jan Craninckx1

imec, Leuven, Belgium, 2Renesas Electronics, Itami, Japan, Renesas Electronics, Takasaki, Japan 1 3 Due to the increasing demand for communication bandwidth combined with the