% Efficient 11MHz 22W LED Driver Using GaN FETs and Burst-Mode Controller with 0.96 Power Factor

📋 论文概要

该论文提出了一种使用GaN FETs和突发模式控制器的11MHz 22W LED驱动器，实现了0.96的高功率因数。通过集成控制器和驱动器，减少了元件数量，实现了驱动器的小型化和高效化。

💡 主要创新点

• 采用GaN FETs替代传统硅FETs，利用其低导通电阻和低栅极电荷特性，实现了11MHz的高频开关操作，从而减小了无源元件尺寸。
• 提出突发模式控制器，在保持高功率因数的同时，提高了轻载效率，并简化了控制电路。
• 将控制器和驱动器集成在单芯片上，减少了外部元件数量，进一步缩小了驱动器PCB面积。

🏷 关键词

📄 原文摘要

LEDs, the lighting industry is expected to see a significant growth in the near future. However, for LEDs to completely replace the traditional incandescent and CFL bulbs, the power converters within the LED drivers need to be miniaturized. Superior figure of merit (Rds,ONxQg) of Gallium Nitride (GaN) FETs over Silicon FETs [1] can enable both high efficiency and high frequency operation, thereby making power converters smaller, more efficient and reliable. By using integrated controllers and drivers, the number of components on the driver PCB can be reduced, further miniaturizing the driver. This work focuses on demonstrating a small form factor, high efficiency offline LED driver using GaN FETs with an integrated gate

👥 作者与机构

Saurav Bandyopadhyay1, Bob Neidorff2, Dave Freeman3, Anantha P. Chandrakasan1

Massachusetts Institute of Technology, Cambridge, MA, Texas Instruments, Manchester, NH, 3Texas Instruments, Dallas, TX 1 2 With the advent of reliable, high brightness and high efficacy