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ISSCC 2013Session 25 · ENERGY-EFFICIENT WIRELESSWireless45nm CMOS

A 45nm CMOS Near-Field Communication Radio with 0.15A/m RX Sensitivity and 4mA Current Consumption in Card Emulation Mode

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📋 论文概要

本文提出了一款45nm CMOS工艺的近场通信(NFC)无线电收发器,在卡模拟模式下实现了0.15A/m的接收灵敏度和4mA的电流消耗。该设计支持0.15至12A/m的宽动态场强范围,满足多个NFC标准的要求。

💡 主要创新点

核心指标
0.15A/m RX sensitivity, 4mA current consumption in card emulation mode
工艺节点
45nm CMOS
重要性
发表年份
ISSCC 2013

🏷 关键词

近场通信射频收发器低功耗卡模拟模式高灵敏度

📄 原文摘要

Abhishek Agrawal1, Vikas Singh1, Ronen Issac2, Ofer Blonskey2, Ofer Adler2, Yoav Benkuzari2, Matan Ben-Shachar2, Srikanth Manian1, Apu Sivadas1, Subhashish Mukherjee1, Gangadhar Burra3, Nir Tal2, Yariv Shlivinski2, Guy Bitton2, Sreekiran Samala3 Texas Instruments, Bangalore, India, Texas Instruments, Ra’anana, Israel, 3 Texas Instruments, Dallas, TX 1 2 Near Field Communication (NFC) is an emerging technology that is penetrating the mobile phone market rapidly. Compliance to multiple NFC standards [1-3] requires designs to support wide dynamic range of field (0.15 to 12A/m), multiple data rates (1.65 to 848Kb/s), various modulation transition times (0.01 to 8usec), wide range of modulation indices (8 to 100%) and line coding techniques (Manchester, NRZ, Modified Miller and PPM). Also, support for small antenna size and very low power card emulation (tag) operation results in additional design constraints. The solution described here integrates all the NFC

👥 作者与机构

Yogesh Darwhekar1, Evgeniy Braginskiy2, Koby Levy2,

分类:Wireless · 年份:ISSCC 2013