An Ultra-Low-Power 9.8GHz Crystal-Less UWB Transceiver with Digital Baseband Integrated in 0.18µm BiCMOS

📋 论文概要

该论文设计了一款集成数字基带的超低功耗无晶振9.8GHz UWB收发器，采用0.18µm BiCMOS工艺。通过堆叠FET和休眠模式降低泄露功耗，并利用5位电容阵列实现单次频率校准，解决了传统晶振功耗高和频率稳定性的问题。

💡 主要创新点

• 提出无晶振的UWB收发器架构，利用堆叠逆变器比较器和休眠模式大幅降低静态功耗
• 集成5位电容阵列实现单次工艺校准，在0-50°C范围内频率变化仅1%，支持高占空比工作

🏷 关键词

📄 原文摘要

Yoonmyung Lee2, David D. Wentzloff2 Cavium, Marlborough, MA, University of Michigan, Ann Arbor, MI T, to trigger the switching threshold, VH, so that the overall period remains unchanged. The comparator consists of two stacked inverters with hysteresis levels set by R3 and R4. Stacking the FETs reduces leakage power while the oscillator is asleep, and a 5b capacitor bank is added to the oscillator for onetime process calibration of frequency. The oscillator has a measured variation of 1% over a range of 0°C to 50°C that allows the TX and RX to be heavily dutycycled between pulses in order to give the on-chip storage capacitor time to fully recharge and also sufficient accuracy to maintain network synchronization. 1 2 Future biomedical and internet-of-things applications are driving the volume of wireless sensors into the cubic-mm regime. At the mm-scale, complete integration is necessary, and operation within the limits of a micro-battery becomes a

👥 作者与机构

Jonathan K. Brown1, Kuo-Ken Huang2, Elnaz Ansari2, Ryan R. Rogel2,