A BJT-Based CMOS Temperature Sensor with a 3.6pJ·K2-Resolution FoM

📋 论文概要

该论文提出了一种基于BJT的CMOS温度传感器，采用连续时间占空比调制器替代传统的离散时间ΔΣ调制器，简化了与微控制器的接口，并实现了3mK的分辨率（2.2ms测量时间）和3.6pJ·K2的分辨率FoM，能效相比之前工作提升了3倍。

💡 主要创新点

• 采用连续时间占空比调制器作为接口电路，避免了传统ΔΣ调制器对微控制器时序的严格要求，易于集成。
• 在标准CMOS工艺中实现了基于BJT的高精度温度传感，并达到3.6pJ·K2的能效FoM，较以往提升3倍。

🏷 关键词

📄 原文摘要

Delft University of Technology, Delft, The Netherlands, 3 Guilan University, Rasht, Iran, 4 SensArt, Delft, The Netherlands 1 2 This paper presents a precision BJT-based temperature sensor implemented in standard CMOS. Its interface electronics consists of a continuous-time dutycycle modulator [1], whose output can be easily interfaced to a microcontroller, rather than the discrete-time ΔΣ modulators of most previous work [2-4]. This approach leads to high resolution (3mK in a 2.2ms measurement time) and high energy efficiency, as expressed by a resolution FoM of 3.6pJK2, which is a 3× improvement on the state of the art [4,5]. By employing chopping, dynamic element matching and a single room temperature trim, the sensor also achieves a spread of less than ±0.15°C (3σ) from -45 to 130°C. The sensor’s basic operating principle is illustrated in Fig. 12.8.1. Under the control of a Schmitt trigger (ST), a capacitor C is alternately charged by a current

👥 作者与机构

Ali Heidary1,2,3, Guijie Wang1,2, Kofi Makinwa2, Gerard Meijer1,2,4

Smartec, Breda, The Netherlands,