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ISSCC 2014Session 20 · WIRELESS SYSTEMSWireless40nm CMOS

A Multi-Band Inductor-Less SAW-Less 2G/3G-TDSCDMA Cellular Receiver in 40nm CMOS

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📋 论文概要

本文提出了一种在40nm CMOS工艺中实现的多频段无电感无SAW的2G/3G-TDSCDMA蜂窝接收器,通过共享基带CR滤波器和双二阶PGA,解决了多标准集成中的面积和功耗问题。

💡 主要创新点

工艺节点
40nm CMOS
重要性
发表年份
ISSCC 2014

🏷 关键词

多频段接收器无SAW2G/3GTD-SCDMA40nm CMOS

📄 原文摘要

evolution of cellular phone networks. New-generation cellular standards use wider channel bandwidth and more sophisticated modulation to obtain higher data-rates. Due to various cellular standards, chip providers are required to offer highly integrated solutions that support 2G, 3G, and even 4G in one chip. This paper presents a receiver supporting 2G quad bands and 3G TD-SCDMA dual bands. Figure 20.7.1 shows the 2G/3G receiver, whose front-end current-mode outputs are combined at baseband CR filter and biquad PGA, which are shared between all bands. A dynamic gain-bandwidth-product-extension circuit technique is used to remove a transimpedance amplifier to save die area and current. Multiple LNAs are necessary to support the large number of bands covering different areas and countries (up to 40 bands worldwide), which significantly

👥 作者与机构

Ming-Da Tsai, Chih-Fan Liao, Chi-Yun Wang, Yi-Bin Lee, Bosen Tzeng, Guang-Kaai Dehng

MediaTek, Hsinchu, Taiwan The growing demand for high-speed wireless communication has driven the

分类:Wireless · 年份:ISSCC 2014