A 34V Charge Pump in 65nm Bulk CMOS Technology

📋 论文概要

本文在65nm bulk CMOS工艺中设计了一个34V的电荷泵，用于MEMS振荡器的高压偏置。通过创新的电路拓扑和器件堆叠技术，克服了低电压工艺中阱/衬底击穿电压的限制，实现了高电压输出。

💡 主要创新点

• 提出了一种在65nm bulk CMOS中实现34V电荷泵的电路架构，通过串联晶体管和动态阱偏置避免击穿。
• 采用多级电荷泵与电压调节技术，在低压工艺下稳定输出34V高压。
• 针对MEMS振荡器应用优化，在保证高电压的同时维持低功耗和小面积。

🏷 关键词

📄 原文摘要

University of California, Los Angeles, CA, 2SiTime, Sunnyvale, CA now with Altera, San Jose, CA 1 * Recent advances in MEMS-based oscillators have resulted in their proliferation in timing applications that were once exclusive to quartz-based devices [1]. For applications requiring low phase noise — e.g., cellular, GPS and high-speed serial links — one possible approach is to bias the MEMS resonator at a higher DC voltage to reduce its motional impedance and increase signal energy [2]. Realizing high-voltage charge pumps in bulk CMOS technology is limited by the breakdown voltage of the well/substrate diodes shown in Fig. 23.8.1(a) and Fig. 23.8.1(b). This breakdown limit is even lower with technology scaling and is <10V in a 22nm CMOS node. Systems with high-voltage requirements often resort to older, high-voltage-tolerant nodes or exotic technologies that limit MEMS integration into SoCs. This work demonstrates a charge pump design in

👥 作者与机构

Yousr Ismail1, Haechang Lee2,*, Sudhakar Pamarti1, Chih-Kong Ken Yang1