⚡ 本页包含 AI 生成的分析内容,仅供参考
该论文提出了一种前馈控制的片上开关电容电压调节器,在32nm SOI CMOS工艺中实现了10W的功率输出。通过采用深沟槽电容器和创新的控制方法,解决了高功率密度、高效率与快速响应时间之间的权衡问题。
Thomas Toifl1, Christian Menolfi1, Lukas Kull1, Thomas Morf1, Marcel Kossel1, Matthias Brändli1, Pier Andrea Francese1 IBM Research, Rüschlikon, Switzerland, 2ETH Zürich, Zürich, Switzerland 1 On-chip (or fully integrated) switched-capacitor (SC) voltage regulators (SCVR) have recently received a lot of attention due to their ease of monolithic integration [1-4]. The use of deep trench capacitors can lead to SCVR implementations that simultaneously achieve high efficiency, high power density, and fast response time [5]. For the application of granular power distribution of many-core microprocessor systems, the on-chip SCVR must maintain an output voltage above a certain minimum level Vout,min in order for the microprocessor core to meet setup time requirements. Following a transient load change, the output voltage typically exhibits a droop due to parasitic inductances and resistances in the power distribution network. Therefore, the
Toke Meyer Andersen1,2, Florian Krismer2, Johann Walter Kolar2,