A Forward-Body-Bias Tuned 450MHz Gm-C 3rd-Order Low-Pass Filter in 28nm UTBB FD-SOI with >1dBVp IIP3 over a 0.7-to-1V Supply

📋 论文概要

该论文提出了一种在28nm UTBB FD-SOI工艺中实现的前向体偏置调谐的450MHz Gm-C三阶低通滤波器。通过使用前向体偏置替代传统的电源电压调谐，解决了逆变器基Gm-C滤波器需要精细可控电源电压且消耗额外功耗的问题，在0.7-1V电源电压范围内实现了大于1dBVp的IIP3。

💡 主要创新点

• 提出使用前向体偏置（FBB）替代电源电压来调谐逆变器基Gm-C滤波器，避免了电源调谐所需的电压余量和功耗。
• 在28nm UTBB FD-SOI工艺中实现了450MHz带宽的3阶低通Gm-C滤波器，在宽电源电压范围内保持了高线性度（IIP3 > 1dBVp）。

🏷 关键词

📄 原文摘要

inverter-based Gm-C filters [1,2] allow achieving bandwidths beyond what is possible with opamp-RC techniques. The class-AB behavior of the inverter, together with the high transconductance for a given quiescent current, results in a high dynamic range for a given power consumption when optimally biased [3]. The major disadvantage of traditional inverter-based Gm-C filters is that they are tuned with the supply voltage, VDD, and hence require a finely controllable supply. Voltage regulators used to accomplish this require a voltage headroom (including margin for tuning) and degrade total power efficiency by tens of percent. In this paper, we show that by exploiting body biasing in an ultra-thin buried oxide (BOX) and body, fully-depleted SOI (UTBB FD-SOI) CMOS technology, we overcome the

👥 作者与机构

Joeri Lechevallier1,2, Remko Struiksma1, Hani Sherry2, Andreia Cathelin2,

Eric Klumperink1, Bram Nauta1 University of Twente, Enschede, The Netherlands, STMicroelectronics, Crolles, France 1 2 Due to the absence of internal nodes,