⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文提出了一种29nW的超低功耗带隙基准电路，通过创新的电路设计解决了传统BGR在低功耗下温度稳定性差的问题，实现了极低功耗下的精确电压参考。
Young-Chul Cho2, Seong-Jin Jang2, Joo Sun Choi2, Byungsub Kim1, Hong-June Park1, Jae-Yoon Sim1 Pohang University of Science and Technology, Pohang, Korea, Samsung Electronics, Hwaseong, Korea 1 2 Bandgap references (BGRs) are widely used to generate a temperatureinsensitive reference voltage determined by the silicon bandgap. The BGR generally utilizes PN diodes to generate both of proportional-to-absolutetemperature (PTAT) and complementary-to-absolute-temperature (CTAT) quantities and combines them to eliminate the temperature dependency. Though the BGR provides a robust voltage or current reference with insensitivity to process, voltage and temperature variations that is superior to CMOS-only reference circuits, it has received little attention in ultra-low-power (ULP) sensor applications. While CMOS-only reference circuits have recently demonstrated nanowatt power consumption [1], BGR approaches still have two critical factors
Jong Mi Lee1, Youngwoo Ji1, Seungnam Choi1,