1650µm2 Thermal-Diffusivity Sensors with Inaccuracies Down to ±0.75°C in 40nm CMOS

📋 论文概要

该论文提出了一种基于热扩散原理的紧凑型温度传感器，在40nm CMOS工艺中实现了1650µm²的小面积和±0.75°C的高精度，解决了传统MOS/BJT传感器在纳米工艺下面积大、需多点校准的问题。

💡 主要创新点

• 利用热扩散率随温度变化的物理特性实现温度传感，避免了传统器件对工艺和电压的依赖。
• 通过斩波稳定技术和动态元件匹配，在极小面积内达到亚度级精度，无需多点校准。
• 采用40nm CMOS工艺实现，展示了与先进数字工艺的良好兼容性。

🏷 关键词

📄 原文摘要

Compact temperature sensors are widely used in SoCs to monitor on-chip temperature gradients and hot-spots, which are known to negatively impact reliability [1-4]. In this application, sensors must be able to accurately track fast thermal transients with little overhead in terms of their area and trimming. However, conventional MOS- and BJT-based sensors do not scale well in nanometer CMOS, as BJT-based sensors are incompatible with sub-1V supplies, while both require expensive multi-point trimming to achieve sub-1°C inaccuracy [1-4]. Recently, it has been shown that the well-defined thermal diffusivity of bulk silicon can be exploited to realize small, fast and accurate temperature sensors [5,6]. Such thermal-diffusivity (TD) sensors operate by measuring the temperature-dependent phase-shift of an electro-thermal filter (ETF), which consists of a resistive heater in close proximity to a thermopile. Moreover, unlike

👥 作者与机构

Uğur Sönmez, Fabio Sebastiano, Kofi A.A. Makinwa

Delft University of Technology, Delft, The Netherlands