A Microwave Injection-Locking Outphasing Modulator with 30dB Dynamic Range and 22% System Efficiency in 45nm CMOS SOI

📋 论文概要

该论文提出了一种基于注入锁定技术的outphasing调制器，用于微波高容量通信系统，解决了高峰均比（PAPR）波形下的发射效率问题。在45nm CMOS SOI工艺上实现了30dB动态范围和22%系统效率。

💡 主要创新点

• 采用注入锁定技术实现outphasing调制，避免了传统片外或片上DSP的复杂性和功耗。
• 在45nm CMOS SOI工艺上集成，实现了30dB动态范围和22%系统效率的高性能指标。

🏷 关键词

📄 原文摘要

University of California, Santa Barbara, CA 1 2 High-capacity microwave systems demand high-efficiency transmit architectures that support complex waveforms with high peak-to-average-power-ratio (PAPR) modulation. The outphasing scheme transforms the arbitrary amplitude and phase of a complex signal into two phase-modulated constant-envelope waveforms and allows the power amplifiers (PAs) to operate at peak power and efficiency while transmitting high PAPR waveforms. Recent work has adopted outphasing modulation with off-chip digital signal processing (DSP) [1-3], or with on-chip DSP approximations [4]. However, these approaches tend to require high power consumption and degrade the overall system power efficiency as symbol rates scale up. In this work, the amplitude-to-phase modulation is implemented through a nonlinear analog circuit scheme based on coupled oscillators that does not appear

👥 作者与机构

Mohammad Mehrjoo1, James Buckwalter1,2

University of California, San Diego, CA,