A 0.7V 1.5-to-2.3mW GNSS Receiver with 2.5-to-3.8dB NF in 28nm FD-SOI

📋 论文概要

该论文提出了一款面向IoE可穿戴设备的GNSS接收机，采用28nm FD-SOI工艺，在0.7V低电压下实现了1.5-2.3mW的低功耗和2.5-3.8dB的低噪声系数，解决了可穿戴设备对低功耗和高灵敏度GNSS接收的需求。

💡 主要创新点

• 在0.7V超低电压下实现GNSS接收机，通过电路设计优化降低功耗至1.5-2.3mW。
• 利用28nm FD-SOI工艺的体偏置技术，在低电压下保持低噪声系数（2.5-3.8dB）。

📄 原文摘要

Hitoshi Tomiyama1, Hideyuki Takano1, Fumitaka Kondo1, Yusuke Shinohe1, Hidenori Takeuchi1, Nobuhisa Ozawa1, Shingo Harada2, Shinichiro Eto2, Mari Kishikawa3, Daisuke Ide3, Hiroyasu Tagami3, Masayuki Katakura3, Norio Shoji1 Sony, Atsugi, Japan, Sony LSI Design, Atsugi, Japan, 3 Sony LSI Design, Fukuoka, Japan 1 2 We are approaching the age of IoE, in which wearable devices such as smart watches will be widespread. Sensing processors play a key role and the Global Navigation Satellite System (GNSS) is considered fundamental. Power consumption is one of the most important characteristics for such sensing processors. However, current GNSS receivers consume around 10mW [1,2] and are difficult to be embedded. GNSS receivers require high supply voltage for lownoise RF, which contributes to large power consumption. We developed 0.7V RF circuits that enable effective use of FD-SOI. Among the RF circuits, an LNA and

👥 作者与机构

Ken Yamamoto1, Kenichi Nakano1, Gaku Hidai1, Yuya Kondo1,