⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文设计了一种用于WCDMA/LTE应用的高效率多频段Class-F功率放大器，采用0.153μm Bulk CMOS工艺。为了在恶劣条件下保护功率放大器，论文还集成了实时电压应力监测(VSM)电路，通过跟踪峰值漏极电压来指示并防止过压应力。
Solti Peng, Jing Li, Wenchang Lee, Narayanan Baskaran, Caiyi Wang Although the Class-F operation and the HVMOS improve reliability significantly, real-time voltage-stress monitoring (VSM) is implemented on each of the outputstage amplifier drains to indicate the voltage stress and to protect the PA under severe conditions. The VSM circuit in Fig. 2.5.3 comprises of series diodes, a capacitor, and a resistor divider. The diodes and the capacitor track the peak drain voltage. The divided voltage is compared with the reference voltage (Vref) to signal the stress on the device. MediaTek, Austin, TX Rapid growth in LTE smart phones has increased the demand for multiband power amplifiers (PAs) that have low cost and high efficiency. This paper describes a multiband WCDMA/LTE PA fabricated in a low-cost 0.153μm (85% shrink of 0.18μm) bulk CMOS process that has the highest PAE among published CMOS
Jenwei Ko, Xiaochuan Guo, Changhua Cao, Saravanan Rajapandian,