A SiGe BiCMOS E-Band Power Amplifier with 22% PAE at 18dBm OP1dB and 8.5% at 6dB Back-Off Leveraging Current Clamping in a Common-Base Stage

📋 论文概要

本文提出一种采用电流钳位技术的SiGe BiCMOS E波段功率放大器，在18dBm输出功率下实现22%的峰值PAE，并在6dB回退时保持8.5%的PAE，解决了毫米波功率放大器回退效率低的问题。

💡 主要创新点

• 提出电流钳位技术，在功率回退时动态调整偏置，显著提升回退效率。
• 在SiGe BiCMOS工艺中实现E波段高PAE功率放大器，兼顾输出功率与效率。

🏷 关键词

📄 原文摘要

now with HiSilicon-Technologies, Milan, Italy 2 Several spectrum portions at mm-waves are considered for Gb/s data-rates in 5G cellular wireless backhaul and access networks, further motivating innovation in circuits and systems for efficient transceivers [1,2]. Small or pico-cell networks are required for spatial diversity and propagation-loss compensation, suggesting silicon solutions also for backhauling where the E-band is a candidate. Techniques for spectral and power efficiency are being investigated, key for capacity improvements over LTE and deployment of the large number of required cells. A transmitter power amplifier (PA), delivering near 20dBm, is a key block for power saving. With the high peak-to-average ratio of QAM modulations, PAs are operated at 5-to-8dB back-off [2], where the efficiency of reported silicon E-band PAs is in the order of a few percent only [3-5]. Techniques adopted at RF, such as supply modulation for envelop tracking and

👥 作者与机构

Junlei Zhao1,2, Elham Rahimi1, Francesco Svelto1, Andrea Mazzanti1

University of Pavia, Pavia, Italy