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本文提出了一种工作在28GHz的宽带功率放大器，采用40nm CMOS工艺，支持8×100MHz载波聚合，以满足5G通信对高数据速率和线性度的需求。通过创新的电路设计，解决了CMOS功率放大器在毫米波频段输出功率低和线性度差的问题。
racing to deploy fifth generation (5G) mm-wave technology, e.g., rollout of some 28GHz-band services is intended in 2017 in the USA with ~5/1Gb/s downlink/uplink targets. Even with 64-QAM signaling, this translates to an RF bandwidth (RFBW) as large as ~800MHz. With ~100m cells and a dense network of 5G access points (APs), potential manufacturing volumes make low-cost CMOS technology attractive for both user equipment (UE) and AP devices. However, the poor Pout and linearity of CMOS power amplifiers (PAs) are a bottleneck, as ~10dB back-off is typical for meeting error-vector-magnitude (EVM) specifications. This limits communication range and PA power added efficiency (PAE), with wider RFBWs accentuating these issues further. On the other hand, sufficient element counts in the envisaged 5G
Sherif Shakib1, Mohamed Elkholy1, Jeremy Dunworth2, Vladimir Aparin2, Kamran Entesari1
Texas A&M University, College Station TX Qualcomm, San Diego, CA 1 2 To meet rising demand, broadband-cellular-data providers are