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ISSCC 2017Session 7 · WIRELESS TRANSCEIVERSWireless40nm CMOS

A 40nm Low-Power Transceiver for LTE-A Carrier Aggregation

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📋 论文概要

该论文设计了一款40nm低功耗收发器,支持LTE-A载波聚合(CA),旨在满足移动通信对更高数据速率的需求。通过多频段同时通信,有效提升了信道带宽利用效率。

💡 主要创新点

工艺节点
40nm CMOS
重要性
发表年份
ISSCC 2017

🏷 关键词

低功耗收发器LTE-A载波聚合40nm工艺

📄 原文摘要

Chung-Yun Chou1, Sheng-Che Tseng1, Chih-Hsien Shen1, Yu-Tsung Lu1, Hsinhung Chen1, Song-Yu Yang1, Yen-Tso Chen1, Guang-Kaai Dehng1, Yangjian Chen2, Christophe Beghein2, Dimitris Nalbantis2, Manel Collados2, Bernard Tenbroek2, Jonathan Strange2, Caiyi Wang3 MediaTek, Hsinchu, Taiwan MediaTek, Kent, United Kingdom 3 MediaTek, Austin, TX 1 2 The demand of higher data-rates for mobile communication has driven the LTE standard to adopt methods to increase channel bandwidth by Carrier Aggregation (CA), this is known as LTE-Advanced (LTE-A). Due to regional spectrum allocation, these carriers can be inter-band, or intra-band with contiguous (CCA) or non-contiguous (NCCA) channels. The band combinations create a major challenge for an LTE-A transceiver (TRX) in dealing with the intermodulation (IM) of aggregated channels. These IM sources include fundamental and harmonics of LOs, VCOs, and the transmitter (TX) modulated signals. In addition, when

👥 作者与机构

Chinq-Shiun Chiu1, Shih-Chieh Yen1, Chi-Yao Yu1, Tzung-Han Wu1,

分类:Wireless · 年份:ISSCC 2017