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ISSCC 2017Session 7 · WIRELESS TRANSCEIVERSWireless55nm CMOS

A 118mW 23.3GS/s Dual-Band 7.3GHz and 8.7GHz Impulse-Based Direct RF Sampling Radar SoC in 55nm CMOS

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📋 论文概要

该论文提出了一款在55nm CMOS工艺上实现的低功耗双频段脉冲直接射频采样雷达SoC,其采样率高达23.3GS/s,功耗仅118mW,支持7.3GHz和8.7GHz两个频段,解决了宽带脉冲雷达中ADC功耗过高的问题,适用于非接触生命体征监测等应用。

💡 主要创新点

核心指标
118mW功耗,23.3GS/s采样率,7.3GHz/8.7GHz双频段
工艺节点
55nm CMOS
重要性
发表年份
ISSCC 2017

🏷 关键词

脉冲雷达直接射频采样双频段低功耗SoCCMOS

📄 原文摘要

Sumit Bagga1, Håkon A. Hjortland1, Mats Risopatron Knutsen1, Tor Sverre Lande2, Dag T. Wisland1,2 Novelda AS, Oslo, Norway University of Oslo, Oslo, Norway 1 2 Radar sensors find use in a wide range of applications [1–4]. Impulse radars operating below 10GHz offer opportunities in applications including non-contact vital signs monitoring, such as breathing and heart rate, presence detection, and ranging. However, the wide instantaneous bandwidth incurs a power penalty from the ADC, calling for unconventional receiver (RX) architectures [4, 5]. In practical use, the received power from narrowband interferers, such as 802.11, can be much larger than the echo from the targets, requiring an unnecessarily large RX dynamic range. In this paper we report an impulse radar SoC (shown in Fig. 7.7.1), featuring a transmitter (TX) that complies with regulations for unlicensed operation, 1b direct RF sampling, and RF interference rejection. The system is

👥 作者与机构

Nikolaj Andersen1, Kristian Granhaug1, Jørgen Andreas Michaelsen1,

分类:Wireless · 年份:ISSCC 2017