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本文提出了一种基于BJT的温度传感器，通过结合电压校准技术和片上加热器，在室温下进行纯电学测量即可实现封装鲁棒性校准。该传感器在-55°C至+125°C范围内达到±0.3°C（3σ）的不精确度，解决了传统温度校准需要精确温度环境的问题。
This paper presents a BJT-based temperature sensor, which can be accurately trimmed in both ceramic and plastic packages, on the basis of purely electrical measurements at room temperature. This is achieved by combining the voltagecalibration technique from [1] with an on-chip heater, which can heat the sensing BJTs from room temperature to ~85°C in 0.5s. Measurements show that the sensor can then be trimmed to an inaccuracy of ±0.3°C (3σ) over the military range (–55 to +125°C). This is similar to the inaccuracy obtained after conventional temperature calibration, i.e., at well-defined temperatures, but requires much less calibration time and infrastructure. A block diagram of the sensor is shown in Fig. 9.3.1. As in [2,3], an ADC is used to digitize the ratio XS = VBE/ΔVBE, where ΔVBE is the difference in the base-emitter voltages of two BJTs biased at a fixed collector-current ratio p. In this design, p
Bahman Yousefzadeh, Kofi A. A. Makinwa
Delft University of Technology, Delft, The Netherlands