94% Power-Recycle and Near-Zero Driving-DeadZone N-Type Low-Dropout Regulator with 20mV Undershoot at Short-Period Load Transient of Flash Memory in Smart Phone respectively. The dynamic bias I1 (IDYN) is about 0.05% of IOUT and the ratio of I2 to I1 is about 1/40. Consequently, at maximum ILOAD=800mA, the proposed LDO performs about 94% power recycling of the controller by recycling dynamic current I1=400μA while I2 and the constant quiescent current of the other controller are 10μA and 15μA, respectively.

📋 论文概要

提出了一种N型低压差稳压器，通过功率回收和近零驱动死区技术实现了94%的功率回收效率，并在短周期负载下将下冲降低至20mV，解决了传统LDO效率低和瞬态响应差的问题。

💡 主要创新点

• 采用94%功率回收技术，显著提升LDO效率。
• 实现近零驱动死区，改善瞬态响应速度。
• 提出ARFF补偿与馈通路径，增强频率稳定性并加速瞬态恢复。

🏷 关键词

📄 原文摘要

On the other hand, the proposed ARFF compensation in Figure 27.8.2 provides a dominant pole for frequency compensation and enhances the transient response. For achieving high SR without sacrificing large quiescent current, two on-chip capacitors, C1 and C2, are designed to avoid heavy capacitance load on the nodes through the main feedback path, such as nodes V2, V3, and V5. Besides, C1 acts as a feed-forward coupling path from VOUT to V1 to further accelerate transient response while V1 response is limited by the low-quiescent-current requirement. In Fig. 27.8.3 (b), VOUT undershoot can be fed back to V1 through the coupling path of C1, and the power MOSFET can instantly deliver power to charge up VOUT at light-to-heavy load transient. However, without MF, the sudden charging up of VOUT feeds back to V1 through C1 again so that the power delivery of the power MOSFET is withdrawn and VOUT then drops again. That is, VOUT has kick-back

👥 作者与机构

Wei-Chung Chen, Tzu-Chi Huang, Chao-Chang Chiu, Chih-Wei Chang, Kuo-Chun Hsu