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本文提出一种基于GaN的Class-E无线充电发射器,实现了100W功率和91%的效率。通过差分阻抗匹配控制,实现零电压开关(ZVS)和零电压导数开关(ZVDS),有效减少硬开关和反向导通带来的效率损失。
devices charged by a wireless-power-transfer (WPT) system has become more common as illustrated in Fig. 15.3.1. A wide-power-range (no load ~100W), compact, and efficient WPT system needs to include the following features. First, an impedance-matching technique that achieves zero-voltage switching (ZVS) and zero voltage-derivative switching (ZVDS) on a Gallium Nitride (GaN) switch is needed to reduce the efficiency loss caused by hard switching (HS) and reverse conduction (RC). Second, under high-power conditions, it is desirable to reduce the voltage and current stress on each switch and passive components. Third, there is a need to reduce the number of external components for compact size. In [1] and
Cheng-Yu Xie1, Shang-Hsien Yang1, Shen-Fu Lu1, Fa-Yi Lin1, Yen-An Lin1,
You-Zheng Ou-Yang1, Ke-Horng Chen1, Kuo-Chi Liu1, Yin-Hsi Lin2 National Chiao Tung University, Hsinchu, Taiwan Realtek Semiconductor, Hsinchu, Taiwan 1 2 Having multiple