A 10MHz i-Collapse Failure Self-Prognostic GaN Power Converter with TJ-Independent In-Situ Condition Monitoring and Proactive Temperature Frequency Scaling

📋 论文概要

该论文提出了一种针对GaN功率转换器的故障自预测方法，实现了结温无关的原位状态监测，有效解决了GaN开关在高压大电流应力下的可靠性问题。

💡 主要创新点

• 提出i-Collapse故障自预测技术，能够提前预警GaN开关的失效风险。
• 实现了结温无关（TJ-Independent）的原位条件监测，提高了监测的准确性和实用性。

🏷 关键词

📄 原文摘要

With superior figure of merits, GaN switchs are highly anticipated to replace MOSFETs in high-performance power circuits [1,2]. However, GaN technology today still faces formidable reliability challenges [3]. While GaN device aging and failure mechanisms are not as well-studied as silicon counterparts, its unique structure and operation also induce new aging and failure problems. Use a GaN switch MH in a buck converter of Fig. 15.6.1 as an example. As a high-side switch, it faces large-switching-current and high-input-voltage stress in each charge phase. After repetitive switching actions, a number of electron carriers can be injected into the AlGaN barrier and buffer layers, known as hot-electron injection. In discharge phase, MH is off, but ML becomes conductive, which shorts the source of MH to ground, creating high VDS stress on MH. This induces charge traps in the insulator and buffer layers, known as charge trapping. As a joint effect of

👥 作者与机构

Yingping Chen, D. Brian Ma

University of Texas at Dallas, Richardson, TX