⚡ 本页包含 AI 生成的分析内容,仅供参考
该论文在65nm CMOS工艺中实现了一种可扩展的量子磁力计,通过将纳米金刚石颗粒与CMOS传感器集成,实现了芯片级的氮空位(NV)中心磁传感,解决了传统系统中使用笨重离架组件的问题。同时,该磁力计具备矢量场检测能力,并改善了ODMR曲线的波动,提升了灵敏度。
Room-temperature control and detection of the nitrogen vacancy (NV) center in diamond’s spin-state has enabled magnetic sensing with high sensitivity and spatial resolution [1], [2]. However, current NV sensing apparatuses use bulky off-the-shelf components, which greatly increase the system’s scale. In [3], a compact platform, which attaches nanodiamond particles to a CMOS sensor, shrinks this spin-based magnetometer to chip scale; however, the optically detected magnetic resonance (ODMR) curve it generates carries large fluctuation leading to inferior sensitivity. In this paper, we present a CMOS-NV quantum sensor with (i) a highly-scalable microwave-delivering structure and (ii) a Talboteffect-based photonic filter with enhanced green-to-red suppression ratio. The former enables coherent driving of an increased number of NV centers, and the latter reduces the shot noise of the photo-detector caused by the input green laser.
Mohamed I. Ibrahim, Christopher Foy, Dirk R. Englund, Ruonan Han
Massachusetts Institute of Technology, Cambridge, MA