SHARC: Self-Healing Analog with RRAM and CNFETs

📋 论文概要

该论文提出了SHARC技术，利用RRAM和CNFET实现模拟电路的自修复，解决了碳纳米管中金属型CNT导致的功能失效和漏电问题。

💡 主要创新点

• 结合RRAM的可编程电阻特性，实时检测并补偿CNFET电路中因金属CNT引起的性能退化。
• 将自修复机制与模拟电路设计协同优化，实现无需外部干预的持续自我调整。

🏷 关键词

📄 原文摘要

promising emerging technology for energy-efficient electronics (Fig. 29.8.1). Despite this promise, CNTs are subject to substantial inherent imperfections; every ensemble of CNTs includes some percentage of metallic CNTs (m-CNTs). m-CNTs result in conductive shorts between CNFET source and drain, resulting in excessive leakage and degraded (potentially incorrect) circuit functionality (Fig. 29.8.1). Several techniques have been developed to remove the majority of m-CNTs (no technique today removes 100% of m-CNTs). While these techniques enabled the first digital CNFET circuits, it is still not possible to realize large-scale CNFET analog or mixed-signal CNFET circuits due to m-CNTs. As shown in Fig. 29.8.1, while a digital logic gate can still function correctly in the presence of a small fraction of m-CNTs (but with degraded

👥 作者与机构

Aya G. Amer, Rebecca Ho, Gage Hills, Anantha P. Chandrakasan, Max M. Shulaker

Massachusetts Institute of Technology, Cambridge, MA Carbon nanotube (CNT) field-effect transistors (CNFETs) are a