A 13.5dBm Fully Integrated 200-to-255GHz Power Amplifier with a 4-Way Power Combiner in SiGe:C BiCMOS

📋 论文概要

本文提出了一种采用4路功率合成器的200-255GHz全集成功率放大器，在SiGe:C BiCMOS工艺上实现了13.5dBm的输出功率，解决了毫米波太赫兹频段硅基功率放大器输出功率受限的问题。

💡 主要创新点

• 采用4路功率合成技术实现了200GHz以上频段的高效功率合成，突破了传统窄带设计的限制。
• 全集成设计，无需外部匹配网络，实现了200-255GHz宽带工作。
• 在SiGe BiCMOS工艺上实现了13.5dBm的高输出功率，为太赫兹通信和雷达应用提供了可行的硅基解决方案。

🏷 关键词

📄 原文摘要

In order to efficiently utilize the frequency band above 200GHz for radar and communication applications, enough transmitted output power is essential to overcome the elevated path loss. For silicon-based technologies, the available output power at this frequency range is limited. The enlarging of the transistor size and so the corresponding power handling leads to a reduced output impedance. This causes the impedance transformation ratio to increase allowing only for narrow-band designs. Power combining of multiple single power amplifiers (PAs) is a common approach to achieve high output power alleviating the need to enlarge the devices size [1]. In this paper, we present a fully integrated PA that combines the power of 4 differential PA units using a 4-way zero-degree combiner and a 4-way active splitter to feed the 4 PA units. Different approaches are possible for power combining. Although Wilkinson

👥 作者与机构

Mohamed Hussein Eissa1, Dietmar Kissinger1,2

IHP, Frankfurt (Oder), Germany; 2Technische Universität Berlin, Berlin, Germany