A Monolithic E-Mode GaN 15W 400V Offline Self-Supplied Hysteretic Buck Converter with 95.6% Efficiency

📋 论文概要

该论文提出了一种单片集成E-Mode GaN 15W 400V离线自供电迟滞降压变换器，实现了95.6%的高效率。通过将GaN HEMT和驱动器单片集成在GaN-on-Silicon技术上，有效控制了寄生参数并减小了方案尺寸，解决了传统分立方案中的性能瓶颈。

💡 主要创新点

• 在GaN-on-Silicon平台上单片集成了E-Mode GaN HEMT和驱动器，实现更高集成度和更低寄生。
• 采用自供电架构，无需外部辅助电源，适用于离线应用。
• 利用迟滞控制实现简单高效的高压降压变换，同时达到95.6%的效率。

🏷 关键词

📄 原文摘要

Texas Instruments, Freising, Germany, 3 Texas Instruments, Dallas, TX 1 2 Due to superior figures-of-merit (FoMs), gallium nitride (GaN) high-electron mobility transistors (HEMTs) offer a huge potential for high-voltage switching applications in power electronics. Recent developments show a trend from board level designs with discrete GaN HEMTs and separate silicon-based drivers [1-3] towards monolithic integration of GaN HEMT and driver in GaN-on-Silicon technology [4, 5]. This has led to even better control of parasitics along with significantly smaller solution size. While monolithic integration of high-voltage offline power converters has been demonstrated using silicon technology [6], the lack of any suitable p-type device [7] is a major challenge towards full integration including control loops and analog circuit blocks in GaN. Moreover, random crystal defect rates between 5 and 10 per μm2 strongly affect the electron mobility

👥 作者与机构

Maik Kaufmann1, Michael Lueders2, Cetin Kaya3, Bernhard Wicht1

Leibniz University Hannover, Hannover, Germany