A 110mK 295µW 28nm FDSOI CMOS Quantum Integrated Circuit with a 2.8GHz Excitation and nA Current Sensing of an On-Chip Double Quantum Dot

📋 论文概要

该论文提出了一款基于28nm FDSOI CMOS工艺的量子集成电路，可在110mK极低温下工作，功耗仅295µW。芯片集成了2.8GHz激励信号生成和nA级电流检测功能，用于片上硅基量子比特的控制与读取，解决了量子计算中低温、低功耗、高频激励与微弱信号检测的集成难题。

💡 主要创新点

• 首次在28nm FDSOI CMOS平台上实现110mK低温下工作的完整量子集成电路，包含激励与检测功能。
• 采用低功耗设计（295µW）同时支持2.8GHz高频激励和nA级电流检测，满足硅基量子比特的操控与读出需求。

🏷 关键词

📄 原文摘要

Marcos Zurita1, Yvain Thonnart1, Maud Vinet1, Marc Sanquer2, Romain Maurand2, Aloysius G. M. Jansen2, Gaël Pillonnet1 CEA-LETI-MINATEC, Grenoble, France CEA-IRIG, Grenoble, France 1 2 To reach quantum supremacy, quantum computers need >50 logical qubits with <mV accurate biasing, GHz-range signal handling, and µs readout of thousands of physical qubits at sub-Kelvin temperatures. Silicon-based qubits are a promising approach to scale the qubit number owing to their low footprint (100nm) and gaining from the CMOS industrial background to reach maturity [1]. Moreover, the quantum silicon choice allows the IC community to integrate largescale qubit-control electronics directly nearby the quantum silicon core, thus drastically reducing the wire-connection number and qubit-addressing fanout, meanwhile increasing the operation bandwidth for error correction and the spinreadout sensitivity. Recent publications have already explored electrical performance with, e.g., MHz

👥 作者与机构

Loïck Le Guevel1,2, Gérard Billiot1, Xavier Jehl2, Silvano De Franceschi2,