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该论文提出了一种混合ΔΣ-PWM D类音频放大器,实现了28W输出功率、-108.9dB THD和-102.2dB THD+N,峰值效率达91%,并降低了EMI发射。通过全差分H桥输出级和优化的栅极驱动设计,解决了高效率与低失真之间的权衡问题。
Lucien Breems2, Marco Berkhout3, Qinwen Fan1, Kofi A.A. Makinwa1 The fully differential H-bridge output stage is shown in Fig. 23.4.1. It consists of four identical N-LDMOS devices (MH and ML) with an RON of ~100m$, which results in >90% peak power efficiency. Schottky diodes (DS) and off-chip bootstrap capacitors (CBS) are used to derive the boosted supply voltages (~14V with respect to VSW) of the MH gate drivers. As the maximum VGS of MH and ML is 5V, on-chip voltage regulators are used to create local 5V supplies relative to the sources of MH and ML, and power the respective gate drivers [7]. Level shifters transmit the control signals from the low-voltage digital domain (DVDD = 1.8V) to the HV domains. AD modulation is used to drive the two halves of the H-bridge, as the resulting outputs are then 180 degrees phase apart, producing significantly lower common-mode (CM) EMI than BD modulation [6]. In general, CM EMI is
Shoubhik Karmakar1, Huajun Zhang1, Robert Van Veldhoven2,