A 0.0088mm2 Resistor-Based Temperature Sensor Achieving 92fJ·K2 FoM in 65nm CMOS

📋 论文概要

该论文提出了一种基于电阻的温度传感器，采用65nm CMOS工艺，实现了0.0088mm²的极小面积和92fJ·K²的卓越能效品质因数。解决了电阻型温度传感器在面积与分辨率之间的权衡问题。

💡 主要创新点

• 提出了一种新型电阻式温度传感器架构，结合高增益传感器和ΔΣ模数转换器，在极小面积下实现了高能效。
• 与传统Wien桥和Wheatstone桥结构相比，大幅提升了能效品质因数（FoM）。

🏷 关键词

📄 原文摘要

University of Illinois, Urbana, IL Resistor-based temperature sensors can achieve superior performance in terms of energy efficiency and resolution compared to their BJT counterparts. Among them, Wien- (WB)[1]- and Wheatstone-Bridge(WhB)[2]-based architectures are the most popular. They employ an integrated resistor as a sensor and read out the temperature-dependent voltage/current/phase-shift using a high-resolution ∆Σ analog-to-digital converter (ADC). The high gain of the sensor combined with small quantization error of the ∆Σ ADC make these architectures the best in terms of resolution FoM (20 to 100fJ∙K2) [1,2]. However, high-resolution ∆Σ ADCs occupy large area (>0.1mm2). Using a polyphase filter as a sensor, [3] proposed a frequency-locked-loop(FLL)-based readout scheme to solve both the area problem and the high-frequency clock requirement (see Fig. 3.2.1). While it significantly reduced the area (<0.01mm2), the FLL front-end circuits, specifically

👥 作者与机构

Amr Khashaba, Junheng Zhu, Ahmed Elmallah, Mostafa Ahmed, Pavan Kumar Hanumolu