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ISSCC 2020Session 32 · POWER MANAGEMENT TECHNIQUESPower Management

A 0.4-to-1.2V 0.0057mm2 55fs-Transient-FoM RingAmplifier-Based Low-Dropout Regulator with Replica-Based PSR Enhancement

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📋 论文概要

本文提出了一种基于环形放大器的低压差稳压器(LDO),通过副本电路增强电源抑制比(PSR),解决了数字LDO输出纹波大、PSR差以及依赖时钟频率的问题。该LDO在0.4-1.2V输入电压范围内实现了0.0057mm²的芯片面积和55fs的瞬态FoM。

💡 主要创新点

核心指标
0.4-1.2V输入, 0.0057mm²面积, 55fs瞬态FoM
重要性
发表年份
ISSCC 2020

🏷 关键词

低压差稳压器环形放大器电源抑制比增强瞬态响应

📄 原文摘要

Digital low-dropout regulators (DLDOs) are commonly used in low-power systemon-chips (SoCs) because of their low-voltage operation and fast transient response via the digital control of a power gate. However, the digital control of the power gate results in an output voltage ripple and a decrease in the powersupply rejection (PSR). In addition, the transient performance of DLDOs depends strongly on the operating clock frequency. Several techniques such as eventdriven operation [1], VCO-embedded time-based control [2], and computed regulation [3] have been proposed to reduce the dependency on the operating clock frequency. Nonetheless, the output voltage ripple and PSR degradation of DLDOs still need to be addressed. Although an inverter-based analog LDO [4] that provides a low-voltage operation and a wide-band PSR has been proposed, as compared to DLDOs it has a slow transient response and narrow input voltage

👥 作者与机构

Jun-Eun Park, Jeongho Hwang, Jonghyun Oh, Deog-Kyoon Jeong

Seoul National University, Seoul, Korea

分类:Power Management · 年份:ISSCC 2020