A 0.51nW 32kHz Crystal Oscillator Achieving 2ppb Allan Deviation Floor Using High-Energy-to-Noise-Ratio Pulse Injection

📋 论文概要

本文提出一种0.51nW、32kHz的晶体振荡器，采用高能量噪声比脉冲注入技术，实现了2ppb的艾伦方差底限。解决了超低功耗晶振中功耗与相位噪声性能的权衡问题。

💡 主要创新点

• 提出高能量-噪声比脉冲注入技术，在极低功耗下有效维持振荡稳定性
• 通过优化能量注入效率与振幅控制，将功耗降至0.51nW同时保持低噪声

🏷 关键词

📄 原文摘要

minimum power while disturbing the oscillation as little as possible. In order to achieve subnW power consumption, there are three fundamental considerations: the loss in the crystal, the efficiency of energy injection, and the power required to extract oscillation frequency and phase as well as drive the injection. Crystal loss is a quadratic function of oscillation amplitude (VOSC) in series resonance, and it is a quadratic function of both VOSC and load capacitance (CL) in parallel resonance. Recent nW XOs use an amplitude control circuit [1] or lower voltage supply [25] to reduce VOSC, while [5] has no explicit capacitance on the crystal nodes to reduce CL. These techniques greatly reduce the crystal loss such that it no longer dominates total power [1]. However, lower oscillation amplitude makes the

👥 作者与机构

Li Xu1, Taekwang Jang2, Jongyup Lim1, Kyojin Choo1, David Blaauw1, Dennis Sylvester1

University of Michigan, Ann Arbor, MI ETH Zürich, Zürich, Switzerland 1 2 In ultra-low-power crystal oscillators (XOs), the ideal circuit consumes