⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文提出了一种基于GaN的单片集成参考电压设计，实现了-50°C至200°C宽温度范围内23.6ppm/°C的低温度系数，解决了传统CMOS参考电压在高温汽车电子应用中性能退化的问题。
Kai-Cheng Chung1, Neha Kumari1, Ke-Horng Chen1, Yin-Hsi Lin2, Shian-Ru Lin2, Tsung-Yen Tsai2, Ying-Zong Juang3 National Chiao Tung University, Hsinchu, Taiwan Realtek Semiconductor, Hsinchu, Taiwan 3 Taiwan Semiconductor Research Institute (TSRI), Hsinchu, Taiwan 1 2 The demand for automotive electronics is increasing in autonomous-driving electric vehicles. Automotive electronics use high-power-density DC-DC converters that are required to withstand extreme operating temperatures up to 200°C. As depicted in the top left of Fig. 3.8.1, conventional bandgap and CMOS reference-voltage circuits have a lower operating temperature [1-8]. Although power consumption can be effectively reduced from 2.6nW [2] to 192pW [8], the reference-voltage circuits are not suitable for high-power-density applications due to the limited temperature range. For industrial GaN applications, the supply voltage needs to support a wide
Cheng-Hsing Liao1, Shang-Hsien Yang1, Meng-Yin Liao1,