A Fully Integrated GaN-on-Silicon Gate Driver and GaN Switch with Temperature-compensated Fast Turn-on Technique for Improving Reliability

📋 论文概要

该论文提出了一种全集成GaN-on-Si栅极驱动器和GaN开关，采用温度补偿快速开启技术，解决了GaN-on-Si异质缺陷导致的温度敏感性问题，提升了功率集成电路的性能和可靠性。

💡 主要创新点

• 实现了GaN-on-Si栅极驱动器与GaN开关的全集成，减少了外部元件和寄生效应。
• 提出温度补偿快速开启技术，补偿GaN-on-Si工艺中温度引起的性能变化，确保快速开关的稳定性。
• 通过优化电路设计克服了GaN缓冲层与硅衬底间的异质缺陷，提高了高温下的可靠性。

🏷 关键词

📄 原文摘要

Gallium-Nitride (GaN) high-electron-mobility transistors (HEMTs) have the advantages of low parasitic capacitance, low on-resistance (RON), and no reverse recovery charge loss [1-5]. Thus, using GaN HEMTs one can optimize the performance of power integrated circuits. However, today’s GaN HEMTs have serious process defects, especially depending on the selected substrate. A 650V GaN-on-Si structure is shown in Fig. 33.1.1, and there are severe heterogeneous defects between the GaN buffer layer and the Si substrate. Thus, temperature changes will seriously aggravate the hot carrier injection, and the two-dimensional electron gas (2DEG) layer in the GaN HEMT will weaken over time. The on-resistance (RON) and threshold voltage (VTH,E) of 650 GaN

👥 作者与机构

Hsuan-Yu Chen1, Yu-Yung Kao1, Zhi-Qiang Zhang1, Cheng-Hsiang Liao1,

Hong-Yuan Yang1, Ming-Sheng Hsu1, Ke-Horng Chen1, Ying-Hsi Lin2, Shian-Ru Lin2, Tsung-Yen Tsai2 National Chiao Tung University, Hsinchu, Taiwan Realtek Semiconductor, Hsinchu, Taiwan 1