A 600V GaN Active Gate Driver with Dynamic Feedback Delay Compensation Technique Achieving 22.5% Turn-On Energy Saving are shown in Fig. 33.2.3. The detection branch current Isen is copied to the AMPD proportionally through current mirror pairs of MP5 and MP6. For large dv/dt value, the gate voltage of MP0 is higher, realizing lower gate overdrive voltage. Otherwise the gate overdrive voltage will increase to enable a larger driving current.

📋 论文概要

该论文提出了一种600V GaN有源栅极驱动器，采用动态反馈延迟补偿技术，通过相位检测和电荷泵电路实现延迟的自适应调整，从而减少开关损耗。实验结果表明，该技术能够实现22.5%的开启能量节省。

💡 主要创新点

• 提出动态反馈延迟补偿技术，通过相位检测和电荷泵电路实时调整延迟，减少开关损耗。
• 采用电压控制延迟（VCD）电路，根据相位差自动调节栅极驱动信号，提高效率。

🏷 关键词

📄 原文摘要

The phase modulation circuit and its waveforms are depicted in Fig. 33.2.3. The phase difference between SRstart and VFBD is detected by the phase-detect circuit (PD) and then converted to voltage domain through the charge pump (CP). Mup turns on to charge Ccp when SRstart gets ahead of VFBD. Otherwise, Mdw turns on to discharge Ccp as showed in Fig. 33.2.3. The voltage variation of VC1 represents the phase difference between two input signals. The volt-control delay (VCD) will delay VPM1 based on the potential of VC1. The phased of VPM1 will self-adjust each cycle to reduce the phase difference between SRstart and VFBD. When the phases of SRstart and VFBD are the same, the potential of VC1 remains constant, and the optimal driving current changing time can be obtained. Southeast University, Nanjing, China Central Semiconductor Manufacturing Corporation, Wuxi, China 1 2 *Equally Credited Authors (ECAs)

👥 作者与机构

Jing Zhu*1, Ding Yan*1, Siyuan Yu1, Weifeng Sun1, Gang Shi1, Siyang Liu1, Sen Zhang2