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ISSCC 2021Session 33 · HIGH-VOLTAGE, GaN AND WIRELESS POWERWireless

An 8A 998A/inch3 90.2% Peak Efficiency 48V-to-1V DC-DC Converter Adopting On-Chip Switch and GaN Hybrid Power Conversion

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📋 论文概要

提出了一种48V至1V的DC-DC转换器,采用片上开关与GaN混合功率转换,通过12级串联电容拓扑实现8A输出、功率密度998A/inch³、峰值效率90.2%,解决了现有采用分立GaN开关成本高且功率密度低的问题。

💡 主要创新点

核心指标
8A输出, 998A/inch³功率密度, 90.2%峰值效率
重要性
发表年份
ISSCC 2021

🏷 关键词

DC-DC转换器GaN混合功率转换高功率密度48V-to-1V

📄 原文摘要

intelligent and power hungry. The 48V-to-1V converter, which offers a promising solution to the highpower density data center and automotive applications, is quickly gaining the interest of researchers [1-4]. The prior state-of-the arts, however, mainly employ Gallium Nitride (GaN) or other discrete switches for 48V-to-1V design, which increases costs and hurts power density. In this work, a 12-level series-capacitor converter adopting on-chip switch and GaN hybrid power conversion is proposed. By exploiting the benefits of lowvoltage on-chip transistors, this work reduces component count, increases switching frequency and improves power density. Power designers have long been pursuing switches with ever lower resistance and parasites. A typical figure-of-merit (FOM) for switch is defined as FOM=Rdson × Qoss,

👥 作者与机构

Xu Yang, Haixiao Cao, Chenkang Xue, Lenian He, Zhichao Tan, Menglian Zhao,

Yong Ding, Wuhua Li, Wanyuan Qu Zhejiang University, Hangzhou, China With the advances in artificial intelligence, devices are becoming more

分类:Wireless · 年份:ISSCC 2021