A Monolithic GaN-Based Driver and GaN Power HEMT with Diode-Emulated GaN Technique for 50MHz Operation and Sub-0.2ns Deadtime Control

📋 论文概要

本文提出了一个单片集成的GaN驱动器和GaN功率HEMT，采用二极管仿真GaN技术，实现了50MHz操作和亚0.2ns死区时间，解决了GaN HEMT的陷阱效应和反向传导损耗问题，提高了高频高功率密度应用中的效率。

💡 主要创新点

• 首次实现单片集成的GaN驱动器和GaN功率HEMT，减少了寄生电容和布线电感。
• 提出二极管仿真GaN技术，在死区时间内模拟二极管行为，消除了反向传导损耗。
• 通过优化驱动电路和器件设计，实现了50MHz高频操作和极短的死区时间（亚0.2ns）。

🏷 关键词

📄 原文摘要

Taiwan 1 2 Monolithic gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) have become popular due to their low parasitic capacitance, low on-resistance (RON), and no reverse recovery charge loss for high-frequency and high-power-density applications [1-6]. However, GaN HEMTs have several process defects [7], such as trapping effect and reverse-conduction loss, which will reduce the efficiency of GaN-based converters. Referring to Fig. 14.1.1, during the deadtime, the VSW falls to negative voltage before low-side GaN HEMT (QL) becomes conductive. Even without a body diode, QL will experience “self-commutation loss” when the voltage difference between its gate and drain exceeds the threshold voltage (VTH,E(650V)). The overall efficiency decreases since

👥 作者与机构

Yu-Yung Kao1, Tz-Wun Wang1, Sheng-Hsi Hung1, Yong-Hwa Wen1,

Tzu-Hsien Yang1, Si-Yi Li1, Ke-Horng Chen1, Ying-Hsi Lin2, Shian-Ru Lin2, Tsung-Yen Tsai2 National Yang Ming Chiao Tung University, Hsinchu, Taiwan Realtek Semiconductor, Hsinchu