⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文提出了一种单片GaN直接48V/1V AHB开关电源IC，集成了自动锁定自动断开电平移位、自举混合栅极驱动和片上温度传感，解决了传统分立方案中寄生效应严重的问题，实现了高集成度的高效电源转换。
Hybrid Gate Driving, and On-Die Temperature Sensing Dong Yan, D. Brian Ma University of Texas at Dallas, Richardson, TX With 10-to-100-fold lower switching figure of merit (QGate$RON), GaN transistors present tremendous superiority over mainstream Si counterparts, offering significant performance boost potential in modern power electronics. However, traditional discrete device solutions heavily rely on board- and package-level wiring to connect GaN transistors, power passives, gate drivers, level shifters, controllers and so on, introducing substantial parasitics. The situation deteriorates drastically under the industry trend towards higher power density and switching frequency, fSW, where the impacts of the parasitics adversely grow against efficiency, reliability, and performance. Although system-in-package technologies are helpful, the improvement is essentially limited and cost remains high [1]. To unlock the full potential of GaN transistors, the ultimate solution
Auto-Lock Auto-Break Level Shifting, Self-Bootstrapped