A 110-to-130GHz SiGe BiCMOS Doherty Power Amplifier with Slotline-Based Power-Combining Technique Achieving >22dBm Saturated Output Power and >10% Power Back-Off Efficiency

📋 论文概要

该论文提出了一种基于槽线（slotline）功率合成技术的D波段（110-130GHz）Doherty功率放大器，采用SiGe BiCMOS工艺实现，解决了毫米波/亚毫米波频段硅基功率放大器输出功率低、无源网络损耗大的问题。最终实现了超过22dBm的饱和输出功率。

💡 主要创新点

• 提出了基于槽线（slotline）的功率合成技术，有效降低了D波段无源网络的损耗，提高了功率合成效率。
• 将Doherty架构应用于110-130GHz频段，实现了高线性度和高效率的功率放大。

🏷 关键词

📄 原文摘要

data-rates in wireless communications has driven the rapid development of silicon-based transceivers in the mm-wave and sub-THz bands. The broad available spectrum in D-band (110 to 170GHz) is attracting interest for short-range and backhaul high-speed communication [1,2]. To overcome the high path loss, a highpower transmitter (TX) or power amplifier (PA) is essential in such systems. However, silicon-based mm-wave PAs encounter several challenges, such as the limited fT/fmax of transistors, low breakdown voltage in CMOS/SiGe transistors, and the considerable loss of passive networks. Additionally, the widely employed high peak-to-average-power-ratio (PAPR) signal poses severe requirements for TXs/PAs, including peak efficiency and

👥 作者与机构

Xingcun Li1,3, Wenhua Chen1, Shuyang Li1, Huibo Wu1, Xiang Yi2, Ruonan Han3, Zhenghe Feng1

Tsinghua University, Beijing, China South China University of Technology, Guangzhou, China 3 Massachusetts Institute of Technology, Boston, MA 1 2 The demand for 100+Gbps