A Cryogenic SiGe BiCMOS Hybrid Class B/C Mode-Switching VCO Achieving 201dBc/Hz Figure-of-Merit and 4.2GHz Frequency Tuning Range

📋 论文概要

该论文提出了一种用于量子计算控制的低温SiGe BiCMOS混合Class B/C模式切换VCO，实现了201dBc/Hz的优值和4.2GHz的频率调谐范围。通过模式切换技术，在低温环境下优化了相位噪声和功耗，解决了量子处理器与经典控制电路之间互连的紧凑性和可靠性问题。

💡 主要创新点

• 提出混合Class B/C模式切换架构，在低温下实现低相位噪声与低功耗的折中。
• 采用SiGe BiCMOS工艺设计，针对4.2K低温环境优化器件模型和电路拓扑。
• 实现了201dBc/Hz的优值（FoM），为量子比特控制提供高质量微波信号。

🏷 关键词

📄 原文摘要

Southern University of Science and Technology, Shenzhen, China 1 2 The interconnects between a quantum processor and control electronics can be made more compact and reliable by placing classical circuits at cryogenic temperature (CT), closer to that of qubits. Low ambient temperature is also favorable to lower the noise of electronics, which is critical for quantum computing applications. Qubit control requires microwave signals modulated by baseband arbitrary waveform envelopes, so as to generate 10ns-to-100ns periodic pulsed signals to manipulate the qubit state [1]. In order to prevent qubit state dephasing, the carrier should have a precision better than 1.9kHz (rms). The signal noise bandwidth should be limited from above by the qubit operation speed and from below by the echo-period [1]. To ensure scalability, signal sources should be tunable in a wide range, e.g., 3-to-9GHz for superconducting qubits,

👥 作者与机构

Yatao Peng1,2, Andrea Ruffino1, Jad Benserhir1, Edoardo Charbon1

Ecole Polytechnique Fédérale de Lausanne, Neuchâtel, Switzerland