A 130V Triboelectric Energy-Harvesting Interface in 0.18µm BCD with Scalable Multi-Chip-Stacked Bias-Flip and Daisy-Chained Synchronous Signaling Technique

📋 论文概要

该论文提出一种基于0.18µm BCD工艺的130V摩擦电能量收集接口，采用可扩展的多芯片堆叠偏置翻转和菊花链结构，解决了TENG高电压（~110V）与集成电路兼容性的问题。

💡 主要创新点

• 实现了130V高压耐受能力，超越了现有70V的限制
• 采用可扩展的多芯片堆叠偏置翻转技术，可适应不同电压需求
• 采用菊花链结构实现多芯片协同工作，提升系统灵活性

🏷 关键词

📄 原文摘要

vibration energy have gained popularity as a next-generation energy source owing to their numerous advantages including flexibility, high conversion efficiency, and low cost. However, ultrahigh instantaneous open-circuit voltage (~110V) is the fundamental feature of TENGs, and thus they are not very compatible with integrated circuits. Recent TENG-harvesting chips [1-3] fabricated in a high-voltage BCD have been reported to be capable of handling up to 70V. Considering TENG’s nature of producing a very low alternating current (IT) of several μA, the constrained tolerable voltage of the energy-harvesting (EH) interface ICs significantly limits the maximum extractable power to a sub-mW scale. Additionally, it is necessary to reduce the energy wasted to charge and discharge the parasitic capacitance (CT) of TENG whenever the polarity of IT changes. To resolve this, several

👥 作者与机构

Jiho Lee, Sang-Han Lee, Gyeong-Gu Kang, Jae-Hyun Kim, Gyu-Hyeong Cho, Hyun-Sik Kim

KAIST, Daejeon, Korea Triboelectric nanogenerators (TENGs) for collecting ambient mechanical