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本文提出一种工作在71-89GHz的12Gb/s双沿触发正交RFDAC,通过双沿触发技术提高数据率,并采用LO泄漏抑制技术增强性能,实现了20.5dBm的峰值输出功率,适用于E-band多Gb/s无线通信。
The growing demand of millimeter-wave (mm-wave) wireless transmission leads to the requirement of low-cost, high-efficiency, and multi-Gb/s data-rate wireless systems. Allocated by the Federal Communications Commission (FCC) and Europe Conference of Postal and Telecommunications (CEPT), the 71-to-76GHz and 81-to-86GHz bands (i.e., the E-band), enable the multi-Gb/s wireless communications [1]. The mm-wave CMOS RF digital-to-analog converters (RFDACs) [2-5] with merits of high system efficiency (SE), simplified system architecture with directly digital modulation, high data-rate, and low cost have drawn great attention. However, the maximal data-rates of these RFDACs are lower than 8Gb/s. To support higher data-rate (e.g., more than 10Gb/s) for E-band applications, high-order modulation signals with large bandwidth must be supported. High sampling frequency is required for RFDACs to achieve large modulation bandwidth,
Bingzheng Yang, Zhixian Deng, Huizhen Jenny Qian, Xun Luo
University of Electronic Science and Technology of China, Chengdu, China