A High Common-Mode Transient Immunity GaN-on-SOI Gate Driver for High dV/dt SiC Power Switch

📋 论文概要

本文提出了一种基于GaN-on-SOI工艺的高共模瞬态抗扰度栅极驱动器，用于驱动高dV/dt的SiC功率开关。该驱动器解决了SiC MOSFET在高速开关时因高dv/dt耦合共模瞬态导致的误触发问题，提升了系统可靠性。

💡 主要创新点

• 采用GaN-on-SOI工艺实现高共模瞬态抗扰度，有效抑制高速开关时的共模干扰。
• 针对1700V SiC MOSFET的高dV/dt（>100kV/μs）和di/dt（>10kA/μs）设计，优化了栅极驱动器的瞬态响应。

🏷 关键词

📄 原文摘要

Semiconductor, Hsinchu, Taiwan 1 2 Silicon carbide (SiC) MOSFET devices offer better performance in high-voltage (HV) and high-current applications, such as electric vehicles, railways, and motor drives due to their low losses, low impedance, high blocking voltage, and good high temperature tolerance. Recently, the rated 1700V SiC is used in a power conversion system (PCS) for efficient energy storage. Compared to 800V and 1200V SiCs, high voltage and fast switching SiC MOSFET will cause large dv/dt (>100kV/μs) and di/dt (>10kA/μs). High dv/dt at the switch node will couple the common mode transient (CMT) disturbances to the high side transmitter (TX) through an isolation barrier parasitic capacitance CPAR. Meanwhile, a large di/dt on the parasitic inductance LPAR will cause abnormal ringing and

👥 作者与机构

Si-Yi Li1, Wei-Chien Hung1, Tz-Wun Wang1, Ya-Ting Hsu1, Ke-Horng Chen1,

Kuo-Lin Zheng1,2, Ying-Hsi Lin3, Shian-Ru Lin3, Tsung-Yen Tsai3 National Yang Ming Chiao Tung University, Hsinchu, Taiwan Chip-GaN Power Semiconductor, Hsinchu, Taiwan 3 Realtek