A GaN Gate Driver with On-chip Adaptive On-time Controller and Negative Current Slope Detector

📋 论文概要

本文提出了一种集成了片上自适应导通时间控制器和负电流斜率检测器的GaN栅极驱动器，用于解决GaN器件在高压应用中因工艺缺陷（如电流崩塌、扭结效应和自热）导致的性能退化问题，从而提升高功率密度应用的效率和可靠性。

💡 主要创新点

• 片上自适应导通时间控制器，可根据工作状态动态调整导通时间以优化开关性能。
• 负电流斜率检测器，用于实时监测和补偿GaN器件的非理想特性，抑制电流崩塌和自热效应。

🏷 关键词

📄 原文摘要

Chang-Lin Go1, Shao-Chang Huang1, Ke-Horng Chen1, Kuo-Lin Zheng1,2, Ying-Hsi Lin3, Shian-Ru Lin3, Tsung-Yen Tsai3 National Yang Ming Chiao Tung University, Hsinchu, Taiwan Chip-GaN Power Semiconductor, Hsinchu, Taiwan 3 Realtek Semiconductor, Hsinchu, Taiwan 1 2 Monolithic gallium nitride (GaN) solutions are widely used in high power density applications, due to low on-resistance (RON) and low parasitic capacitance [1–3]. However, some process defects, such as current collapse, kink effects, and self-heating (top left of Fig. 20.3.1), will degrade the IDS-VDS curve of high voltage GaN devices, which can lead to efficiency degradation and power device damage. Current collapse will increase RON, which will cause the GaN to heat up causing self-heating, and the ID current drops significantly when GaN enters the saturation region. Furthermore, the kink effect induced by hot electrons trapped by donor-like traps through the GaN buffer will induce

👥 作者与机构

Shu-Yung Lin1, Ssu-Yu Lin1, Sheng-Hsi Hung1, Tz-Wun Wang1, Ching-Ho Li1,