A Sub-1V 810nW Capacitively-Biased BJT-Based Temperature Sensor with an Inaccuracy of ±0.15°C (3σ) from -55°C to 125°C

📋 论文概要

本文提出一种亚1V、810nW的电容偏置BJT温度传感器，通过电容偏置技术实现低电压工作，同时利用BJT的高精度特性，在-55°C至125°C范围内达到±0.15°C（3σ）的1点校准精度，比现有电容偏置BJT传感器精度提升4倍。

💡 主要创新点

• 采用电容偏置（CB）技术使BJT温度传感器在亚1V电源电压下工作，同时保持高精度。
• 实现了810nW超低功耗，且精度达到±0.15°C（3σ），显著优于同类CB BJT传感器。

🏷 关键词

📄 原文摘要

Tsinghua University, Beijing, China 1 2 BJT-based temperature sensors are widely used because they can achieve excellent accuracy after 1-point calibration. However, they typically dissipate µWs of power and require supply voltages above 1V [1]. Although sensors based on DTMOSTs [2,3], capacitively biased (CB) diodes and BJTs [4,5] have demonstrated sub-1V operation, this comes at the expense of accuracy. This paper presents a sub-1V CB BJT-based temperature sensor that achieves a 1-point-trimmed inaccuracy of 0.15°C (3σ) from -55°C to 125°C, which is 4× better than the CB BJT state-of-the-art [4]. It also achieves a resolution FoM of 0.34pJ∙K2, which is 6.8× better than that of state-of-the-art BJTbased)sensors)with a similar accuracy [1,6], (Fig. 23.5.6). Figure 23.5.1 (left) shows the operating principle of a CB diode. A sampling capacitor CS is first charged to the supply voltage and then discharged across the diode. After a short

👥 作者与机构

Zhong Tang1, Sining Pan1,2, Kofi A. A. Makinwa1

Delft University of Technology, Delft, The Netherlands